Name: Infineon OptiMOS P P-Channel MOSFET, 7.4 A, 30 V, 8-Pin DSO BSO200P03SHXUMA1
Brand: Infineon
SKU: 857-8494
Price: 0.38 GBP
Availability: OutOfStock

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	7.4 A
	Maximum Drain Source Voltage	30 V
	Package Type	DSO
	Series	OptiMOS P
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	20 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.56 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Width	4mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	40 nC @ 10 V
	Length	5mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Height	1.65mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 7.4 A
	Maximum Drain Source Voltage 30 V
	Package Type DSO
	Series OptiMOS P
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 20 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.56 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Width 4mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 40 nC @ 10 V
	Length 5mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Height 1.65mm
	Minimum Operating Temperature -55 °C

Infineon OptiMOS P P-Channel MOSFET, 7.4 A, 30 V, 8-Pin DSO BSO200P03SHXUMA1

Infineon OptiMOS™P P-Channel Power MOSFETs

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