Name: Infineon OptiMOS P P-Channel MOSFET, 45 A, 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1
Brand: Infineon
SKU: 857-8696
Price: 0.80 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	45 A
	Maximum Drain Source Voltage	30 V
	Series	OptiMOS P
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	18.7 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	58 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +5 V
	Transistor Material	Si
	Width	9.25mm
	Number of Elements per Chip	1
	Length	10mm
	Typical Gate Charge @ Vgs	42 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Height	4.4mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 45 A
	Maximum Drain Source Voltage 30 V
	Series OptiMOS P
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 18.7 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 58 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +5 V
	Transistor Material Si
	Width 9.25mm
	Number of Elements per Chip 1
	Length 10mm
	Typical Gate Charge @ Vgs 42 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Height 4.4mm
	Minimum Operating Temperature -55 °C

RoHS Status: Exempt

Infineon OptiMOS P P-Channel MOSFET, 45 A, 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1

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