Infineon HEXFET N-Channel MOSFET, 99 A, 60 V, 3-Pin DPAK IRLR3636TRPBF
- RS Stock No.:
- 830-3372
- Mfr. Part No.:
- IRLR3636TRPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£11.40
(exc. VAT)
£13.70
(inc. VAT)
FREE delivery for orders over £50.00
- 300 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.14 | £11.40 |
50 - 90 | £0.922 | £9.22 |
100 - 240 | £0.866 | £8.66 |
250 - 490 | £0.798 | £7.98 |
500 + | £0.741 | £7.41 |
*price indicative
- RS Stock No.:
- 830-3372
- Mfr. Part No.:
- IRLR3636TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 99 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8.3 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.5V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 143 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Length | 6.73mm | |
Typical Gate Charge @ Vgs | 49 nC @ 4.5 V | |
Width | 6.22mm | |
Maximum Operating Temperature | +175 °C | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Minimum Operating Temperature | -55 °C | |
Height | 2.39mm | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 99 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 143 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 49 nC @ 4.5 V | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
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