Infineon HEXFET N-Channel MOSFET, 99 A, 60 V, 3-Pin DPAK IRLR3636TRPBF
- RS Stock No.:
- 830-3372
- Mfr. Part No.:
- IRLR3636TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£11.40
(exc. VAT)
£13.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 300 unit(s) shipping from 27 October 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | £1.14 | £11.40 |
| 50 - 90 | £0.922 | £9.22 |
| 100 - 240 | £0.866 | £8.66 |
| 250 - 490 | £0.798 | £7.98 |
| 500 + | £0.741 | £7.41 |
*price indicative
- RS Stock No.:
- 830-3372
- Mfr. Part No.:
- IRLR3636TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 99 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 143 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 49 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 99 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 143 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 49 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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