Infineon HEXFET N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- RS Stock No.:
- 915-5095
- Mfr. Part No.:
- IRLR2905ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£14.24
(exc. VAT)
£17.08
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 80 unit(s) ready to ship
- Plus 700 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.712 | £14.24 |
| 100 - 180 | £0.676 | £13.52 |
| 200 - 480 | £0.647 | £12.94 |
| 500 - 980 | £0.619 | £12.38 |
| 1000 + | £0.375 | £7.50 |
*price indicative
- RS Stock No.:
- 915-5095
- Mfr. Part No.:
- IRLR2905ZTRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 23 nC @ 5 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Width | 7.49mm | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.3V | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 23 nC @ 5 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Width 7.49mm | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.3V | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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