Infineon HEXFET N-Channel MOSFET, 60 A, 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- RS Stock No.:
- 915-5095
- Mfr. Part No.:
- IRLR2905ZTRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£13.62
(exc. VAT)
£16.34
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 100 unit(s) ready to ship
- Plus 700 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.681 | £13.62 |
| 100 - 180 | £0.647 | £12.94 |
| 200 - 480 | £0.62 | £12.40 |
| 500 - 980 | £0.593 | £11.86 |
| 1000 + | £0.359 | £7.18 |
*price indicative
- RS Stock No.:
- 915-5095
- Mfr. Part No.:
- IRLR2905ZTRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A | |
| Maximum Drain Source Voltage | 55 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 13.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Typical Gate Charge @ Vgs | 23 nC @ 5 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 7.49mm | |
| Forward Diode Voltage | 1.3V | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A | ||
Maximum Drain Source Voltage 55 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 13.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 23 nC @ 5 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 7.49mm | ||
Forward Diode Voltage 1.3V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Related links
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2905TRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR2705TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR024NTRLPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR4105ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRLR3105TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin DPAK IRFR2905ZTRPBF