Name: Infineon HEXFET N-Channel MOSFET, 44 A, 55 V, 3-Pin DPAK IRFR1205TRPBF
Brand: Infineon
SKU: 827-4026
Price: 0.99 GBP
Availability: OutOfStock

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 44A Maximum Continuous Drain Current, 107W Maximum Power Dissipation - IRFR1205TRPBF

This high-performance N-channel MOSFET is designed for efficient power management in a variety of applications. It features a maximum continuous drain current of 44A and a maximum drain-source voltage of 55V, making it suitable for professionals in the electronics and automation sectors. The enhancement mode configuration enhances switching efficiency, thereby improving circuit performance.

Features & Benefits

• Low drain-source resistance minimises power loss
• Handles power dissipation up to 107W
• High maximum operating temperature of 175°C for broad applicability
• Optimised gate charge for improved switching efficiency
• Surface-mount design simplifies integration into compact circuits
• Lead-free construction complies with contemporary environmental standards

Applications

• Utilised in power converters to improve efficiency
• Employed in motor control circuits for precise functionality
• Ideal for switching regulators to manage voltage
• Suitable for renewable energy systems
• Appropriate for compact portable electronics

What is the significance of the low on-resistance in this model?

The low on-resistance reduces heat generation during operation, enhancing efficiency and reliability in high-current applications.

How does the enhancement mode configuration benefit circuit design?

The enhancement mode provides better control over switching characteristics, ensuring smooth operation and optimal performance in various electronic applications.

Can this component operate in extreme temperatures?

Yes, it is rated for use in environments from -55°C to +175°C, making it appropriate for various industrial applications.

What are the electrical implications of the gate-source voltage limits?

The gate-source voltage limits ensure safe operation and prevent damage, allowing design flexibility without sacrificing reliability.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	44 A
	Maximum Drain Source Voltage	55 V
	Package Type	DPAK (TO-252)
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	27 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	107 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	65 nC @ 10 V
	Length	6.73mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	6.22mm
	Maximum Operating Temperature	+175 °C
	Height	2.39mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 44 A
	Maximum Drain Source Voltage 55 V
	Package Type DPAK (TO-252)
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 27 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 107 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 65 nC @ 10 V
	Length 6.73mm
	Number of Elements per Chip 1
	Transistor Material Si
	Width 6.22mm
	Maximum Operating Temperature +175 °C
	Height 2.39mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

Infineon HEXFET N-Channel MOSFET, 44 A, 55 V, 3-Pin DPAK IRFR1205TRPBF