Infineon HEXFET Type N-Channel MOSFET, 99 A, 60 V TO-252 IRLR3636TRLPBF
- RS Stock No.:
- 257-9458
- Mfr. Part No.:
- IRLR3636TRLPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.84
(exc. VAT)
£4.61
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,825 unit(s) shipping from 09 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.768 | £3.84 |
| 50 - 120 | £0.668 | £3.34 |
| 125 - 245 | £0.622 | £3.11 |
| 250 - 495 | £0.582 | £2.91 |
| 500 + | £0.422 | £2.11 |
*price indicative
- RS Stock No.:
- 257-9458
- Mfr. Part No.:
- IRLR3636TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 99A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Power Dissipation Pd | 143W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 99A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Power Dissipation Pd 143W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon IRLR series is the 60V single n channel power mosfet in a D-Pak package. The strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including dc motors, battery management systems, inverters, and dc-dc converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below 100 kHz
Related links
- Infineon HEXFET Type N-Channel MOSFET 60 V TO-252
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