Infineon HEXFET Type N-Channel MOSFET, 110 A, 60 V TO-252 IRFR7540TRPBF
- RS Stock No.:
- 257-5806
- Mfr. Part No.:
- IRFR7540TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£2.34
(exc. VAT)
£2.81
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 1,620 unit(s) shipping from 09 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £0.468 | £2.34 |
| 50 - 120 | £0.412 | £2.06 |
| 125 - 245 | £0.388 | £1.94 |
| 250 - 495 | £0.372 | £1.86 |
| 500 + | £0.362 | £1.81 |
*price indicative
- RS Stock No.:
- 257-5806
- Mfr. Part No.:
- IRFR7540TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 86nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 86nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
Related links
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