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Infineon OptiMOS Type N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1

RS Stock No.:: 349-429
Mfr. Part No.:: IPD030N03LF2SATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1

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Subtotal (1 pack of 10 units)*

£7.50

(exc. VAT)

£9.00

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.75	£7.50
100 - 240	£0.713	£7.13
250 - 490	£0.66	£6.60
500 - 990	£0.608	£6.08
1000 +	£0.585	£5.85

*price indicative

RS Stock No.:: 349-429
Mfr. Part No.:: IPD030N03LF2SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	PG-TO252-3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.05mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	83W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	16nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, DIN IEC 68-1: 55/175/56, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type PG-TO252-3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.05mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 83W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 16nC
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, DIN IEC 68-1: 55/175/56, RoHS
	Automotive Standard No

Datasheet - IPD030N03LF2SATMA1

COO (Country of Origin):: CN

The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 3 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards