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Infineon OptiMOS Type N-Channel MOSFET, 73 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1

RS Stock No.:: 349-430
Mfr. Part No.:: IPD040N03LF2SATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 73 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1

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Subtotal (1 pack of 10 units)*

£6.14

(exc. VAT)

£7.37

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2,000 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
10 - 90	£0.614	£6.14
100 - 240	£0.584	£5.84
250 - 490	£0.541	£5.41
500 - 990	£0.497	£4.97
1000 +	£0.479	£4.79

*price indicative

RS Stock No.:: 349-430
Mfr. Part No.:: IPD040N03LF2SATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	73A
	Maximum Drain Source Voltage Vds	30V
	Series	OptiMOS
	Package Type	PG-TO252-3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.05mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	21nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	75W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 73A
	Maximum Drain Source Voltage Vds 30V
	Series OptiMOS
	Package Type PG-TO252-3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.05mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 21nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 75W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56
	Automotive Standard No

Datasheet - IPD040N03LF2SATMA1

COO (Country of Origin):: CN

The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 4 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.

General purpose products

Excellent robustness

Broad availability at distributors

Standard packages and pin out

High manufacturing and supply standards