Infineon OptiMOS Type N-Channel MOSFET, 143 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD020N03LF2SATMA1
- RS Stock No.:
- 349-426
- Mfr. Part No.:
- IPD020N03LF2SATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.35
(exc. VAT)
£12.42
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,980 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.035 | £10.35 |
| 100 - 240 | £0.983 | £9.83 |
| 250 + | £0.911 | £9.11 |
*price indicative
- RS Stock No.:
- 349-426
- Mfr. Part No.:
- IPD020N03LF2SATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 143A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.05mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 136W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 143A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.05mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 136W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, IEC61249-2-21, DIN IEC 68-1: 55/175/56 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 2 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
Related links
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD047N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 600 V, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1
- Infineon IPD N-Channel MOSFET 600 V, 3-Pin PG-TO252-3 IPD60R180CM8XTMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
- Infineon IPD N-Channel MOSFET 30 V, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1
- Infineon Dual SiC N-Channel MOSFET 40 V, 3-Pin PG-TO252-3 IPD023N04NF2SATMA1
- Infineon IPD N-Channel MOSFET 600 V, 22-Pin PG-HDSOP-22 IPDQ60R007CM8XTMA1


