MPN

Infineon OptiMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3 IPD046N08N5ATMA1

RS Stock No.:: 273-2783
Mfr. Part No.:: IPD046N08N5ATMA1
Brand:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3 IPD046N08N5ATMA1

Subtotal (1 reel of 2500 units)*

£2,235.00

(exc. VAT)

£2,682.50

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 30 March 2026

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Units	Per unit	Per Reel*
2500 +	£0.894	£2,235.00

*price indicative

RS Stock No.:: 273-2783
Mfr. Part No.:: IPD046N08N5ATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-TO252-3
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	42nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	125W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-TO252-3
	Series OptiMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 42nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 125W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IPD046N08N5ATMA1

The Infineon MOSFET is a N channel 80V MOSFET. It is an ideal for high frequency switching and synchronous rectification. This MOSFET has 175 degree Celsius operating temperature. This MOSFET qualified according to JEDEC1 for target application and halogen free according to IEC61249 2 21.

RoHS compliant

Pb free lead plating

Excellent gate charge

Very low on resistance