Infineon OptiMOS Type N-Channel MOSFET, 6 A, 950 V Enhancement, 3-Pin PG-TO252-3 IPD95R1K2P7ATMA1
- RS Stock No.:
- 273-2785
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,237.50
(exc. VAT)
£1,485.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.495 | £1,237.50 |
*price indicative
- RS Stock No.:
- 273-2785
- Mfr. Part No.:
- IPD95R1K2P7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 950V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 52W | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 950V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 52W | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a 950V CoolMOS P7 SJ power device. The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best in class performance with state of the art ease of use. Enabling higher power density designs, BOM savings and lower assembly costs. It provides better production yield by reducing ESD related failures.
Less production issues
Fully optimized portfolio
Easy to drive and to parallel
Integrated Zener Diode ESD protection
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