Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223 IRLL014NTRPBF

RS Stock No.:: 830-3307
Mfr. Part No.:: IRLL014NTRPBF
Brand:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.8 A, 55 V Enhancement, 4-Pin SOT-223 IRLL014NTRPBF

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Subtotal (1 pack of 25 units)*

£11.225

(exc. VAT)

£13.475

(inc. VAT)

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In Stock

225 unit(s) ready to ship
Plus 3,350 unit(s) shipping from 02 January 2026

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Units	Per unit	Per Pack*
25 - 100	£0.449	£11.23
125 - 225	£0.346	£8.65
250 - 600	£0.324	£8.10
625 - 1225	£0.301	£7.53
1250 +	£0.248	£6.20

*price indicative

RS Stock No.:: 830-3307
Mfr. Part No.:: IRLL014NTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.8A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SOT-223
	Series	HEXFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	280mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.5nC
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	2.1W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.7mm
	Width	3.7 mm
	Height	1.739mm
	Distrelec Product Id	304-44-472
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.8A
	Maximum Drain Source Voltage Vds 55V
	Package Type SOT-223
	Series HEXFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 280mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.5nC
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 2.1W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.7mm
	Width 3.7 mm
	Height 1.739mm
	Distrelec Product Id 304-44-472
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 2.8A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL014NTRPBF

This MOSFET from Infineon, part of the HEXFET family, is engineered for high performance in various electrical and electronic applications. As an N-channel device operating in enhancement mode, it plays a VITAL role in power management for devices that demand high reliability in challenging conditions. Advanced technologies are integrated to manage substantial electrical loads effectively while keeping a Compact design.

Features & Benefits

• Maximum continuous drain current of 2.8A for dependable performance

• Wide voltage range up to 55V for diverse applications

• Low drain-source on-resistance of 280mΩ minimises power losses

• High thermal stability with a maximum operating temperature of +150°C

• Enhanced gate threshold voltage options to improve switching capabilities

• Designed for surface mount applications, aiding PCB integration

Applications

• Utilised in automation systems for effective motor control

• Employed in power supply circuits for efficient voltage regulation

• Suitable for switching in electronic devices

• Integrated into battery management systems for optimised energy use

• Applicable in LED drivers to enhance control efficiency

What is the recommended mounting technique for optimal performance?

Utilising surface mount techniques ensures improved thermal performance and space efficiency on printed circuit boards.

How should the maximum gate-source voltage be considered when designing circuits?

It is important to maintain the gate-source voltage within the specified limits of -16V to +16V to ensure device integrity and performance.

Can this component handle high temperatures in operational environments?

It is rated for operation in environments up to +150°C, making it suitable for high-temperature applications.

Is it compatible with low-voltage battery systems?

Yes, it can manage low-voltage applications while providing effective power control and switching efficiency.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today