Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NTRPBF
- RS Stock No.:
- 830-3307
- Mfr. Part No.:
- IRLL014NTRPBF
- Brand:
- Infineon
Subtotal (1 pack of 25 units)*
£11.225
(exc. VAT)
£13.475
(inc. VAT)
FREE delivery for orders over £50.00
- 250 unit(s) ready to ship
- Plus 3,350 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
25 - 100 | £0.449 | £11.23 |
125 - 225 | £0.346 | £8.65 |
250 - 600 | £0.324 | £8.10 |
625 - 1225 | £0.301 | £7.53 |
1250 + | £0.248 | £6.20 |
*price indicative
- RS Stock No.:
- 830-3307
- Mfr. Part No.:
- IRLL014NTRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 2.8 A | |
Maximum Drain Source Voltage | 55 V | |
Package Type | SOT-223 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 280 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2V | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.1 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -16 V, +16 V | |
Typical Gate Charge @ Vgs | 9.5 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 6.7mm | |
Number of Elements per Chip | 1 | |
Width | 3.7mm | |
Transistor Material | Si | |
Height | 1.739mm | |
Forward Diode Voltage | 1V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.8 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 280 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Typical Gate Charge @ Vgs 9.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Width 3.7mm | ||
Transistor Material Si | ||
Height 1.739mm | ||
Forward Diode Voltage 1V | ||
Minimum Operating Temperature -55 °C | ||
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