Infineon HEXFET N-Channel MOSFET, 2.8 A, 55 V, 3-Pin SOT-223 IRLL014NTRPBF

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Subtotal (1 pack of 25 units)*

£11.225

(exc. VAT)

£13.475

(inc. VAT)

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  • 250 unit(s) ready to ship
  • Plus 3,350 unit(s) shipping from 08 October 2025
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Units
Per unit
Per Pack*
25 - 100£0.449£11.23
125 - 225£0.346£8.65
250 - 600£0.324£8.10
625 - 1225£0.301£7.53
1250 +£0.248£6.20

*price indicative

Packaging Options:
RS Stock No.:
830-3307
Mfr. Part No.:
IRLL014NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.8 A

Maximum Drain Source Voltage

55 V

Package Type

SOT-223

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.7mm

Number of Elements per Chip

1

Width

3.7mm

Transistor Material

Si

Height

1.739mm

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

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