Infineon HEXFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 IRFR9120NTRPBF

RS Stock No.:: 827-4082
Mfr. Part No.:: IRFR9120NTRPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 6.6 A, 100 V Enhancement, 3-Pin TO-252 IRFR9120NTRPBF

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Subtotal (1 pack of 20 units)*

£13.44

(exc. VAT)

£16.12

(inc. VAT)

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In Stock

Plus 100 unit(s) shipping from 29 December 2025
Plus 40 unit(s) shipping from 29 December 2025
Plus 380 unit(s) shipping from 05 January 2026

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Units	Per unit	Per Pack*
20 - 80	£0.672	£13.44
100 - 180	£0.524	£10.48
200 - 480	£0.491	£9.82
500 - 980	£0.457	£9.14
1000 +	£0.424	£8.48

*price indicative

RS Stock No.:: 827-4082
Mfr. Part No.:: IRFR9120NTRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	6.6A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	480mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	27nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	40W
	Forward Voltage Vf	-1.6V
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Standards/Approvals	No
	Height	2.39mm
	Length	6.73mm
	Distrelec Product Id	304-44-467
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 6.6A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 480mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 27nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 40W
	Forward Voltage Vf -1.6V
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Standards/Approvals No
	Height 2.39mm
	Length 6.73mm
	Distrelec Product Id 304-44-467
	Automotive Standard No

COO (Country of Origin):: CN

Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF

This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.

Features & Benefits

• High continuous drain current rating of 6.6A supports effective operation

• Capable of managing voltages up to 100V for demanding applications

• Designed in DPAK TO-252 package for precise surface mounting

• Low maximum drain-source resistance of 480mΩ improves power efficiency

• Provides a gate threshold voltage range of 2V to 4V for dependable control

• Supports enhancement mode operation to enhance switching performance

Applications

• Utilised for power management in automation systems

• Employed in DC-DC converter designs

• Suitable for high current switching in industrial equipment

• Integrated into power supply circuits for efficient performance

• Applicable in inverter circuits and motor control

What is the optimal operating temperature for this product?

The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.

How can the gate threshold voltage influence performance?

The maximum gate threshold voltage impacts switching behaviour; the defined range of 2V to 4V ensures reliable on/off conditions.

Is there a specific method for mounting this device?

It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.

What does the low RDS(on) mean for my circuit?

A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.

Can this product handle reverse current?

Yes, it possesses characteristics suitable for effectively managing reverse currents, ensuring stability in various applications.

Infineon Schottky Diodes & MOSFETs – Matched for Power, Built for Efficiency

Pair Infineon Schottky diodes with Infineon MOSFETs for a high-efficiency power solution that’s optimised from the ground up. Designed to work together, they deliver fast switching, low losses, and excellent thermal performance—ideal for SMPS, motor drives, and automotive systems. Reduce design complexity and boost reliability with components engineered for synergy.

Explore the Infineon range today