Infineon HEXFET P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK IRFR9120NTRPBF
- RS Stock No.:
- 827-4082
- Mfr. Part No.:
- IRFR9120NTRPBF
- Brand:
- Infineon
Subtotal (1 pack of 20 units)*
£13.44
(exc. VAT)
£16.12
(inc. VAT)
FREE delivery for orders over £50.00
- 60 unit(s) ready to ship
- Plus 100 unit(s) ready to ship from another location
- Plus 480 unit(s) shipping from 08 October 2025
Units | Per unit | Per Pack* |
---|---|---|
20 - 80 | £0.672 | £13.44 |
100 - 180 | £0.524 | £10.48 |
200 - 480 | £0.491 | £9.82 |
500 - 980 | £0.457 | £9.14 |
1000 + | £0.424 | £8.48 |
*price indicative
- RS Stock No.:
- 827-4082
- Mfr. Part No.:
- IRFR9120NTRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 6.6 A | |
Maximum Drain Source Voltage | 100 V | |
Series | HEXFET | |
Package Type | DPAK (TO-252) | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 480 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 6.22mm | |
Length | 6.73mm | |
Transistor Material | Si | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
Height | 2.39mm | |
Forward Diode Voltage | 1.6V | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 480 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Length 6.73mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Height 2.39mm | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
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