Infineon HEXFET P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IRFR5410TRLPBF

Subtotal (1 reel of 3000 units)*

£759.00

(exc. VAT)

£912.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.253£759.00

*price indicative

RS Stock No.:
215-2600
Mfr. Part No.:
IRFR5410TRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.205 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated

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