Infineon HEXFET P-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK IRFR5410TRLPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£19.04

(exc. VAT)

£22.84

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 40 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 20£0.952£19.04
40 - 80£0.905£18.10
100 - 180£0.867£17.34
200 - 480£0.828£16.56
500 +£0.771£15.42

*price indicative

Packaging Options:
RS Stock No.:
215-2601
Mfr. Part No.:
IRFR5410TRLPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.205 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology
Ultra Low On-Resistance
Lead-Free
Fully avalanche rated

Related links