MPN

Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF

RS Stock No.:: 215-2601
Distrelec Article No.:: 304-39-424
Mfr. Part No.:: IRFR5410TRLPBF
Brand:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRLPBF

Bulk discount available

Subtotal (1 pack of 20 units)*

£19.04

(exc. VAT)

£22.84

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

40 unit(s) ready to ship

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
20 - 20	£0.952	£19.04
40 - 80	£0.905	£18.10
100 - 180	£0.867	£17.34
200 - 480	£0.828	£16.56
500 +	£0.771	£15.42

*price indicative

RS Stock No.:: 215-2601
Distrelec Article No.:: 304-39-424
Mfr. Part No.:: IRFR5410TRLPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	205mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.6V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	66W
	Typical Gate Charge Qg @ Vgs	58nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 205mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.6V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 66W
	Typical Gate Charge Qg @ Vgs 58nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFR5410TRLPBF

The Infineon series fifth generation HEXFET from International rectifier utilize advanced processing techniques to achieve extremely low on resistance for Silicon area. This benefits, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET are well known for, providing sufficient level device for, provides designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-pack is designed for surface mounting using vapour phase, infrared or wave soldering technique.

Advanced Process Technology

Ultra Low On-Resistance

Lead-Free

Fully avalanche rated