Infineon HEXFET P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK IRFR9120NTRPBF
- RS Stock No.:
- 913-4795
- Mfr. Part No.:
- IRFR9120NTRPBF
- Brand:
- Infineon
Subtotal (1 reel of 2000 units)*
£690.00
(exc. VAT)
£828.00
(inc. VAT)
FREE delivery for orders over £50.00
- Shipping from 18 December 2025
Units | Per unit | Per Reel* |
---|---|---|
2000 - 2000 | £0.345 | £690.00 |
4000 + | £0.327 | £654.00 |
*price indicative
- RS Stock No.:
- 913-4795
- Mfr. Part No.:
- IRFR9120NTRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | P | |
Maximum Continuous Drain Current | 6.6 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | DPAK (TO-252) | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 480 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 40 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.73mm | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Maximum Operating Temperature | +150 °C | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 480 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel Power MOSFET 100V to 150V, Infineon
Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF
Features & Benefits
• Capable of managing voltages up to 100V for demanding applications
• Designed in DPAK TO-252 package for precise surface mounting
• Low maximum drain-source resistance of 480mΩ improves power efficiency
• Provides a gate threshold voltage range of 2V to 4V for dependable control
• Supports enhancement mode operation to enhance switching performance
Applications
• Employed in DC-DC converter designs
• Suitable for high current switching in industrial equipment
• Integrated into power supply circuits for efficient performance
• Applicable in inverter circuits and motor control
What is the optimal operating temperature for this product?
How can the gate threshold voltage influence performance?
Is there a specific method for mounting this device?
What does the low RDS(on) mean for my circuit?
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