Infineon HEXFET P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK IRFR9120NTRPBF

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Subtotal (1 reel of 2000 units)*

£690.00

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£828.00

(inc. VAT)

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2000 - 2000£0.345£690.00
4000 +£0.327£654.00

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RS Stock No.:
913-4795
Mfr. Part No.:
IRFR9120NTRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

6.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

480 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

27 nC @ 10 V

Height

2.39mm

Minimum Operating Temperature

-55 °C

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF


This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.

Features & Benefits


• High continuous drain current rating of 6.6A supports effective operation
• Capable of managing voltages up to 100V for demanding applications
• Designed in DPAK TO-252 package for precise surface mounting
• Low maximum drain-source resistance of 480mΩ improves power efficiency
• Provides a gate threshold voltage range of 2V to 4V for dependable control
• Supports enhancement mode operation to enhance switching performance

Applications


• Utilised for power management in automation systems
• Employed in DC-DC converter designs
• Suitable for high current switching in industrial equipment
• Integrated into power supply circuits for efficient performance
• Applicable in inverter circuits and motor control

What is the optimal operating temperature for this product?


The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.

How can the gate threshold voltage influence performance?


The maximum gate threshold voltage impacts switching behaviour

the defined range of 2V to 4V ensures reliable on/off conditions.

Is there a specific method for mounting this device?


It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.

What does the low RDS(on) mean for my circuit?


A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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