Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 IRFP7530PBF

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RS Stock No.:
820-8855P
Mfr. Part No.:
IRFP7530PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Series

StrongIRFET

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

341 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

15.87mm

Width

5.31mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

274 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

20.7mm

Forward Diode Voltage

1.2V

StrongIRFET™ Power MOSFET, Infineon


Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF


This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a vital component in advanced circuits used in automation and motor control.

Features & Benefits


• Continuous drain current of 195A improves operational efficiency
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability

Applications


• Suitable for brushed motor drive
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics

What are the benefits of using it in high-current applications?


Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.

How does temperature affect performance?


Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.

Can it be integrated into existing circuits?


Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.

What should be considered for effective heat dissipation?


To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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