Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 IRFP7530PBF
- RS Stock No.:
- 820-8855P
- Mfr. Part No.:
- IRFP7530PBF
- Brand:
- Infineon
Subtotal 20 units (supplied in a tube)*
£53.50
(exc. VAT)
£64.20
(inc. VAT)
FREE delivery for orders over £50.00
- 502 unit(s) ready to ship
Units | Per unit |
---|---|
20 - 48 | £2.675 |
50 - 98 | £2.485 |
100 - 198 | £2.305 |
200 + | £2.15 |
*price indicative
- RS Stock No.:
- 820-8855P
- Mfr. Part No.:
- IRFP7530PBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 195 A | |
Maximum Drain Source Voltage | 60 V | |
Series | StrongIRFET | |
Package Type | TO-247 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.7V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 341 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Length | 15.87mm | |
Width | 5.31mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 274 nC @ 10 V | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 20.7mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 60 V | ||
Series StrongIRFET | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 341 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 15.87mm | ||
Width 5.31mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 274 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 20.7mm | ||
Forward Diode Voltage 1.2V | ||
StrongIRFET™ Power MOSFET, Infineon
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF
Features & Benefits
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability
Applications
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics
What are the benefits of using it in high-current applications?
How does temperature affect performance?
Can it be integrated into existing circuits?
What should be considered for effective heat dissipation?
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