Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK IRFS7534TRLPBF
- RS Stock No.:
- 820-8873
- Mfr. Part No.:
- IRFS7534TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 2 units)*
£4.76
(exc. VAT)
£5.72
(inc. VAT)
FREE delivery for orders over £50.00
- 748 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 - 18 | £2.38 | £4.76 |
20 - 48 | £2.19 | £4.38 |
50 - 98 | £2.05 | £4.10 |
100 - 198 | £1.905 | £3.81 |
200 + | £1.76 | £3.52 |
*price indicative
- RS Stock No.:
- 820-8873
- Mfr. Part No.:
- IRFS7534TRLPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 195 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | D2PAK (TO-263) | |
Series | StrongIRFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 2.4 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.7V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 294 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.67mm | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 186 nC @ 10 V | |
Width | 9.65mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Height | 4.83mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Series StrongIRFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 294 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 186 nC @ 10 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
StrongIRFET™ Power MOSFET, Infineon
Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF
Features & Benefits
• Low Rds(on) of 2.4mΩ improves energy efficiency
• Designed for high temperature operation up to +175°C
• Robust avalanche and dynamic dV/dt ruggedness for dependable operation
• Fully characterised capacitance facilitates accurate switching performance
Applications
• Effective for battery-powered and power converters
• Useful in half-bridge and full-bridge topologies for various designs
• Applicable in DC/AC inverters and resonant mode power supplies
• Ideal for redundant power switches in critical systems
How does this component handle thermal management?
What are the implications of the low Rds(on) value?
Can it be used in applications with variable load conditions?
What type of mounting is recommended for optimal performance?
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