Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF

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£68.00

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£81.50

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100 - 200£1.193£59.65
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RS Stock No.:
145-9657
Mfr. Part No.:
IRFB7530PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

195 A

Maximum Drain Source Voltage

60 V

Package Type

TO-220AB

Series

StrongIRFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

274 nC @ 10 V

Length

10.67mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

4.83mm

Height

16.51mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

StrongIRFET™ Power MOSFET, Infineon


Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF


This high current N-channel MOSFET is engineered for a range of power applications. Its advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.

Features & Benefits


• Maximum continuous drain current of 195A
• Wide operating temperature range from -55°C to +175°C
• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness
• Fully characterised capacitance and avalanche SOA
• Lead-free and complies with RoHS regulations for environmental safety

Applications


• Used in brushed motor drive
• Appropriate for half-bridge and full-bridge topologies
• Suitable for synchronous rectifier
• Ideal for battery-powered circuits and DC/DC converters
• Engaged in AC/DC and DC/AC inverter systems

What is the maximum gate threshold voltage for this component?


The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.

Can this MOSFET operate in high-temperature environments?


Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

How does this MOSFET perform in terms of power dissipation?


It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.

Is it suitable for use in both DC and AC applications?


This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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