Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220 IRFB7530PBF

RS Stock No.:: 820-8833
Mfr. Part No.:: IRFB7530PBF
Brand:: Infineon

Infineon StrongIRFET Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-220 IRFB7530PBF

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Subtotal (1 pack of 2 units)*

£5.32

(exc. VAT)

£6.38

(inc. VAT)

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In Stock

860 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£2.66	£5.32
20 - 48	£2.37	£4.74
50 - 98	£2.235	£4.47
100 - 198	£2.075	£4.15
200 +	£1.915	£3.83

*price indicative

RS Stock No.:: 820-8833
Mfr. Part No.:: IRFB7530PBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	195A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-220
	Series	StrongIRFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	274nC
	Maximum Power Dissipation Pd	375W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.67mm
	Height	16.51mm
	Width	4.83 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 195A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-220
	Series StrongIRFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 274nC
	Maximum Power Dissipation Pd 375W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.67mm
	Height 16.51mm
	Width 4.83 mm
	Automotive Standard No

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF

This high current N-channel MOSFET is engineered for a range of power applications. Its Advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.

Features & Benefits

• Maximum continuous drain current of 195A

• Wide operating temperature range from -55°C to +175°C

• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness

• Fully characterised capacitance and avalanche SOA

• Lead-free and complies with RoHS regulations for environmental safety

Applications

• Used in brushed motor drive

• Appropriate for half-bridge and full-bridge topologies

• Suitable for synchronous rectifier

• Ideal for battery-powered circuits and DC/DC converters

• Engaged in AC/DC and DC/AC inverter systems

What is the maximum gate threshold voltage for this component?

The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.

Can this MOSFET operate in high-temperature environments?

Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

How does this MOSFET perform in terms of power dissipation?

It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.

Is it suitable for use in both DC and AC applications?

This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.

What are the implications of its low RDS(on) for circuit design?

A low RDS(on) minimises conduction losses, thereby enhancing overall system efficiency and enabling smaller heat sinks and improved thermal performance in circuit designs.