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Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF

RS Stock No.:: 820-8833
Mfr. Part No.:: IRFB7530PBF
Brand:: Infineon

Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-220AB IRFB7530PBF

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Subtotal (1 pack of 2 units)*

£3.00

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£3.60

(inc. VAT)

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In Stock

860 unit(s) ready to ship

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Units	Per unit	Per Pack*
2 - 18	£1.50	£3.00
20 - 48	£1.335	£2.67
50 - 98	£1.26	£2.52
100 - 198	£1.17	£2.34
200 +	£1.08	£2.16

*price indicative

RS Stock No.:: 820-8833
Mfr. Part No.:: IRFB7530PBF
Brand:: Infineon

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 375W Maximum Power Dissipation - IRFB7530PBF

This high current N-channel MOSFET is engineered for a range of power applications. Its advanced structure allows for efficient switching and notable performance in challenging environments, making it suitable for the automation and electronics sectors, where reliability and robustness are essential for effective functioning in electrical circuits.

Features & Benefits

• Maximum continuous drain current of 195A
• Wide operating temperature range from -55°C to +175°C
• Enhanced durability with robust avalanche and dynamic dV/dt ruggedness
• Fully characterised capacitance and avalanche SOA
• Lead-free and complies with RoHS regulations for environmental safety

Applications

• Used in brushed motor drive
• Appropriate for half-bridge and full-bridge topologies
• Suitable for synchronous rectifier
• Ideal for battery-powered circuits and DC/DC converters
• Engaged in AC/DC and DC/AC inverter systems

What is the maximum gate threshold voltage for this component?

The maximum gate threshold voltage is 3.7V, facilitating efficient operation in various gate drive configurations.

Can this MOSFET operate in high-temperature environments?

Yes, it functions effectively within a temperature range of -55°C to +175°C, making it suitable for harsh conditions.

How does this MOSFET perform in terms of power dissipation?

It allows for a maximum power dissipation of 375 W, ensuring dependable performance under substantial load conditions.

Is it suitable for use in both DC and AC applications?

This component is designed for versatility, providing effective performance in both DC/DC and AC/DC power conversion applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	195 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-220AB
	Series	StrongIRFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	375 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	274 nC @ 10 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Transistor Material	Si
	Width	4.83mm
	Minimum Operating Temperature	-55 °C
	Height	16.51mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 195 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-220AB
	Series StrongIRFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 375 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 274 nC @ 10 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Transistor Material Si
	Width 4.83mm
	Minimum Operating Temperature -55 °C
	Height 16.51mm
	Forward Diode Voltage 1.2V

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