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Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK IRFS7534TRLPBF

RS Stock No.:: 165-6504
Mfr. Part No.:: IRFS7534TRLPBF
Brand:: Infineon

Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin D2PAK IRFS7534TRLPBF

Bulk discount available

Subtotal (1 reel of 800 units)*

£928.00

(exc. VAT)

£1,112.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 04 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
800 - 800	£1.16	£928.00
1600 +	£1.102	£881.60

*price indicative

RS Stock No.:: 165-6504
Mfr. Part No.:: IRFS7534TRLPBF
Brand:: Infineon

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 294W Maximum Power Dissipation - IRFS7534TRLPBF

This MOSFET is engineered for efficient power management in a range of electronic applications. With the ability to handle continuous drain currents up to 195A and a drain-source voltage rating of 60V, it delivers effective performance for various tasks. Its capabilities in surface-mount configurations enhance circuit efficiency and reliability for professionals in automation and electronics.

Features & Benefits

• High current capacity supports demanding loads
• Low Rds(on) of 2.4mΩ improves energy efficiency
• Designed for high temperature operation up to +175°C
• Robust avalanche and dynamic dV/dt ruggedness for dependable operation
• Fully characterised capacitance facilitates accurate switching performance

Applications

• Suitable for brushed and BLDC motor drive circuits
• Effective for battery-powered and power converters
• Useful in half-bridge and full-bridge topologies for various designs
• Applicable in DC/AC inverters and resonant mode power supplies
• Ideal for redundant power switches in critical systems

How does this component handle thermal management?

It operates efficiently under high thermal conditions with a maximum temperature of +175°C.

What are the implications of the low Rds(on) value?

The low on-resistance minimises conduction losses, leading to enhanced efficiency in power distribution.

Can it be used in applications with variable load conditions?

Yes, its high current capacity and robust characteristics make it capable of managing fluctuating load conditions effectively.

What type of mounting is recommended for optimal performance?

Surface mount technology is suggested for efficient heat dissipation and compact integration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	195 A
	Maximum Drain Source Voltage	60 V
	Package Type	D2PAK (TO-263)
	Series	StrongIRFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	2.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	294 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Typical Gate Charge @ Vgs	186 nC @ 10 V
	Length	10.67mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Width	9.65mm
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 195 A
	Maximum Drain Source Voltage 60 V
	Package Type D2PAK (TO-263)
	Series StrongIRFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 2.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 294 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Typical Gate Charge @ Vgs 186 nC @ 10 V
	Length 10.67mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Width 9.65mm
	Height 4.83mm
	Minimum Operating Temperature -55 °C

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