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Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 IRFP7530PBF

RS Stock No.:: 820-8855
Mfr. Part No.:: IRFP7530PBF
Brand:: Infineon

Infineon StrongIRFET N-Channel MOSFET, 195 A, 60 V, 3-Pin TO-247 IRFP7530PBF

Bulk discount available

Subtotal (1 pack of 2 units)*

£6.14

(exc. VAT)

£7.36

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

2 unit(s) ready to ship
Plus 10 unit(s) ready to ship from another location
Plus 502 unit(s) shipping from 08 October 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 18	£3.07	£6.14
20 - 48	£2.675	£5.35
50 - 98	£2.485	£4.97
100 - 198	£2.305	£4.61
200 +	£2.15	£4.30

*price indicative

RS Stock No.:: 820-8855
Mfr. Part No.:: IRFP7530PBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	195 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-247
	Series	StrongIRFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	2 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.7V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	341 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	5.31mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	274 nC @ 10 V
	Length	15.87mm
	Minimum Operating Temperature	-55 °C
	Height	20.7mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 195 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-247
	Series StrongIRFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 2 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.7V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 341 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 5.31mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 274 nC @ 10 V
	Length 15.87mm
	Minimum Operating Temperature -55 °C
	Height 20.7mm
	Forward Diode Voltage 1.2V

StrongIRFET™ Power MOSFET, Infineon

Infineon's StrongIRFET family is optimized for low R_DS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.

Infineon StrongIRFET Series MOSFET, 195A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP7530PBF

This MOSFET is intended for high-performance power management applications, offering features that support a variety of electronic systems. It facilitates efficient energy transfer and minimises power loss, making it a vital component in advanced circuits used in automation and motor control.

Features & Benefits

• Continuous drain current of 195A improves operational efficiency
• Maximum drain-source voltage of 60V accommodates diverse applications
• Low on-resistance of 2mΩ reduces power dissipation
• Withstands extreme temperatures ranging from -55°C to +175°C
• Gate threshold voltage of 2.1V to 3.7V optimises switching performance
• High avalanche and dynamic dV/dt ruggedness enhances reliability

Applications

• Suitable for brushed motor drive
• Used in battery-powered circuits for enhanced efficiency
• Applicable in half-bridge and full-bridge configurations for flexible circuit design
• Effective in synchronous rectifier for improved efficiency
• Utilised in DC/DC and AC/DC converters within power electronics

What are the benefits of using it in high-current applications?

Employing this MOSFET in high-current conditions allows for effective power management while minimising heat generation due to its low on-resistance, thus ensuring stable performance in rigorous operations.

How does temperature affect performance?

Temperature influences operational limits, with a maximum junction temperature of 175°C ensuring functionality under severe conditions. Its thermal resistance properties help maintain reliability in high-temperature environments.

Can it be integrated into existing circuits?

Yes, its standard TO-247 package design permits easy integration into both new and existing circuit layouts, making it suitable for replacements or upgrades across various applications.

What should be considered for effective heat dissipation?

To uphold optimal performance, ensure appropriate cooling mechanisms are in place, as the maximum power dissipation is 341W. The use of heatsinks or fans can assist in managing temperature effectively.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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