Infineon StrongIRFET N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-247AC IRFP7430PBF
- RS Stock No.:
- 776-9185
- Distrelec Article No.:
- 302-84-055
- Mfr. Part No.:
- IRFP7430PBF
- Brand:
- Infineon
Save 19% when you buy 100 units
Subtotal (1 unit)*
£2.68
(exc. VAT)
£3.22
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 11 unit(s) ready to ship
- Plus 21 unit(s) ready to ship from another location
- Plus 94 unit(s) shipping from 08 October 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £2.68 |
| 10 - 24 | £2.55 |
| 25 - 49 | £2.49 |
| 50 - 99 | £2.33 |
| 100 + | £2.17 |
*price indicative
- RS Stock No.:
- 776-9185
- Distrelec Article No.:
- 302-84-055
- Mfr. Part No.:
- IRFP7430PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 195 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-247AC | |
| Series | StrongIRFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.2V | |
| Maximum Power Dissipation | 366 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 460 nC @ 10 V | |
| Width | 5.31mm | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-247AC | ||
Series StrongIRFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.2V | ||
Maximum Power Dissipation 366 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 460 nC @ 10 V | ||
Width 5.31mm | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
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