Infineon StrongIRFET N-Channel MOSFET, 110 A, 60 V, 3-Pin TO-220AB IRFB7540PBF
- RS Stock No.:
- 820-8849
- Mfr. Part No.:
- IRFB7540PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£3.25
(exc. VAT)
£3.90
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 55 unit(s) ready to ship
- Plus 505 unit(s) shipping from 12 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £0.65 | £3.25 |
| 25 - 45 | £0.618 | £3.09 |
| 50 - 120 | £0.556 | £2.78 |
| 125 - 245 | £0.50 | £2.50 |
| 250 + | £0.476 | £2.38 |
*price indicative
- RS Stock No.:
- 820-8849
- Mfr. Part No.:
- IRFB7540PBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | StrongIRFET | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 88 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.51mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 60 V | ||
Series StrongIRFET | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 160 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 88 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
Height 16.51mm | ||
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