Vishay SQ Rugged N-Channel MOSFET, 12 A, 60 V, 8-Pin SOIC SQ4850EY-T1_GE3
- RS Stock No.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 20 units)*
£18.26
(exc. VAT)
£21.92
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 2,380 unit(s) shipping from 27 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.913 | £18.26 |
| 100 - 180 | £0.858 | £17.16 |
| 200 - 480 | £0.776 | £15.52 |
| 500 - 980 | £0.73 | £14.60 |
| 1000 + | £0.685 | £13.70 |
*price indicative
- RS Stock No.:
- 819-3923
- Mfr. Part No.:
- SQ4850EY-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 47 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 6.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Height | 1.55mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 47 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 6.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
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