Vishay SQ Rugged N-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 SQ3460EV-T1_GE3
- RS Stock No.:
- 787-9468
- Mfr. Part No.:
- SQ3460EV-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 10 units)*
£6.86
(exc. VAT)
£8.23
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 15 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £0.686 | £6.86 |
| 100 - 240 | £0.645 | £6.45 |
| 250 - 490 | £0.583 | £5.83 |
| 500 - 990 | £0.549 | £5.49 |
| 1000 + | £0.515 | £5.15 |
*price indicative
- RS Stock No.:
- 787-9468
- Mfr. Part No.:
- SQ3460EV-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 20 V | |
| Series | SQ Rugged | |
| Package Type | TSOP-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 53 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 3.6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Length | 3.1mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 9.3 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 20 V | ||
Series SQ Rugged | ||
Package Type TSOP-6 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 53 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 3.6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Width 1.7mm | ||
Length 3.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 9.3 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
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