Vishay SQ Rugged N-Channel MOSFET, 8 A, 60 V, 8-Pin PowerPAK 1212-8 SQS462EN-T1_GE3

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Subtotal (1 pack of 5 units)*

£5.82

(exc. VAT)

£6.985

(inc. VAT)

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5 +£1.164£5.82

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Packaging Options:
RS Stock No.:
787-9525
Mfr. Part No.:
SQS462EN-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

PowerPAK 1212-8

Series

SQ Rugged

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

33 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

8 nC @ 10 V

Length

3.4mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

3.4mm

Height

1.12mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor

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