Vishay SQ Rugged N-Channel MOSFET, 32 A, 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3
- RS Stock No.:
- 787-9496
- Mfr. Part No.:
- SQJ412EP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 5 units)*
£11.07
(exc. VAT)
£13.285
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 10 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.214 | £11.07 |
| 50 - 120 | £1.882 | £9.41 |
| 125 - 245 | £1.772 | £8.86 |
| 250 - 495 | £1.66 | £8.30 |
| 500 + | £1.552 | £7.76 |
*price indicative
- RS Stock No.:
- 787-9496
- Mfr. Part No.:
- SQJ412EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | SQ Rugged | |
| Package Type | PowerPAK SO-8L | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 8.5 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.03mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.14mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 40 V | ||
Series SQ Rugged | ||
Package Type PowerPAK SO-8L | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.03mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 80 nC @ 10 V | ||
Automotive Standard AEC-Q101 | ||
Height 1.14mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
Approvals
AEC-Q101
MOSFET Transistors, Vishay Semiconductor
Related links
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