Vishay SQ Rugged N-Channel MOSFET, 32 A, 40 V, 4-Pin PowerPAK SO-8L SQJ412EP-T1_GE3

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Subtotal (1 reel of 3000 units)*

£2,583.00

(exc. VAT)

£3,099.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£0.861£2,583.00

*price indicative

RS Stock No.:
170-8303
Mfr. Part No.:
SQJ412EP-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

40 V

Series

SQ Rugged

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

80 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.03mm

Length

5mm

Transistor Material

Si

Height

1.14mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor


The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.

Advantages of SQ Rugged Series MOSFETs


• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options

Approvals

AEC-Q101


MOSFET Transistors, Vishay Semiconductor

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