Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
- RS Stock No.:
- 165-6285
- Mfr. Part No.:
- SQ4431EY-T1_GE3
- Brand:
- Vishay
Subtotal (1 reel of 2500 units)*
£812.50
(exc. VAT)
£975.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.325 | £812.50 |
*price indicative
- RS Stock No.:
- 165-6285
- Mfr. Part No.:
- SQ4431EY-T1_GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.2 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | SQ Rugged | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 52 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 6 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5mm | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.55mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.2 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series SQ Rugged | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 52 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 6 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.55mm | ||
Related links
- Vishay SQ Rugged P-Channel MOSFET 30 V, 8-Pin SOIC SQ4431EY-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 40 V, 8-Pin SOIC SQ4401EY-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 40 V, 6-Pin TSOP-6 SQ3419EV-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 12 V, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ Rugged P-Channel MOSFET 40 V, 8-Pin SOIC SQ4401EY-T1-GE3
- Vishay SQ Rugged P-Channel MOSFET 60 V, 3-Pin DPAK SQD19P06-60L_GE3
- Vishay SQ Rugged P-Channel MOSFET 20 V, 3-Pin SOT-23 SQ2301ES-T1-GE3
- Vishay SQ Rugged P-Channel MOSFET 30 V, 3-Pin DPAK SQD45P03-12_GE3