Vishay SQ Rugged P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC SQ4431EY-T1_GE3

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Subtotal (1 reel of 2500 units)*

£812.50

(exc. VAT)

£975.00

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.325£812.50

*price indicative

RS Stock No.:
165-6285
Mfr. Part No.:
SQ4431EY-T1_GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

SQ Rugged

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

52 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

5mm

Width

4mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

25 nC @ 10 V

Height

1.55mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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