P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC Vishay SQ4431EY-T1_GE3
- RS Stock No.:
- 819-3920
- Mfr. Part No.:
- SQ4431EY-T1_GE3
- Brand:
- Vishay
Available to back order for despatch 14/03/2025
Price Each (In a Pack of 20)
£0.648
(exc. VAT)
£0.778
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | £0.648 | £12.96 |
| 100 - 180 | £0.519 | £10.38 |
| 200 - 480 | £0.402 | £8.04 |
| 500 - 980 | £0.357 | £7.14 |
| 1000 + | £0.305 | £6.10 |
*price indicative
- RS Stock No.:
- 819-3920
- Mfr. Part No.:
- SQ4431EY-T1_GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 6.2 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | SOIC |
| Series | SQ Rugged |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 52 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 6 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 4mm |
| Transistor Material | Si |
| Length | 5mm |
| Height | 1.55mm |
| Minimum Operating Temperature | -55 °C |
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