Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

7360 In stock - FREE next working day delivery available

Price Each (In a Pack of 20)

£0.222

(exc. VAT)

£0.266

(inc. VAT)

Units	Per unit	Per Pack*
20 +	£0.222	£4.44

*price indicative

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Width	4mm
Minimum Operating Temperature	-55 °C
Height	1.55mm