Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

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Bulk discount available

Price Each (In a Pack of 20)**

£0.597

(exc. VAT)

£0.716

(inc. VAT)

9820 In stock - FREE next working day delivery available*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over £50.00

Units	Per unit	Per Pack**
20 - 180	£0.597	£11.94
200 - 480	£0.46	£9.20
500 - 980	£0.388	£7.76
1000 - 1980	£0.358	£7.16
2000 +	£0.299	£5.98

**price indicative

RS Stock No.:: 812-3233
Mfr. Part No.:: SI4599DY-T1-GE3
Brand:: Vishay

Si4599DY, N- and P-Channel 40V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.7 A, 6.8 A
Maximum Drain Source Voltage	40 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	42.5 mΩ, 62 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	3 W, 3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Transistor Material	Si
Typical Gate Charge @ Vgs	11.7 nC @ 10 V, 25 nC @ 10 V
Width	4mm
Maximum Operating Temperature	+150 °C
Length	5mm
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual N/P-Channel-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

FREE delivery for orders over £50.00

Dual N/P-Channel MOSFET, Vishay Semiconductor

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