Vishay Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC SI4599DY-T1-GE3

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Subtotal (1 reel of 2500 units)*

£515.00

(exc. VAT)

£617.50

(inc. VAT)

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Last RS stock
  • Final 7,500 unit(s), ready to ship
Units
Per unit
Per Reel*
2500 +£0.206£515.00

*price indicative

RS Stock No.:
165-7255
Mfr. Part No.:
SI4599DY-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4.7 A, 6.8 A

Maximum Drain Source Voltage

40 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

42.5 mΩ, 62 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3 W, 3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

11.7 nC @ 10 V, 25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

4mm

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

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