QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	N
	Maximum Continuous Drain Current	9 A
	Maximum Drain Source Voltage	500 V
	Package Type	TO-220F
	Series	QFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	850 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	44 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	4.9mm
	Length	10.36mm
	Typical Gate Charge @ Vgs	28 nC @ 10 V
	Height	16.07mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand onsemi
	Channel Type N
	Maximum Continuous Drain Current 9 A
	Maximum Drain Source Voltage 500 V
	Package Type TO-220F
	Series QFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 850 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 44 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Number of Elements per Chip 1
	Width 4.9mm
	Length 10.36mm
	Typical Gate Charge @ Vgs 28 nC @ 10 V
	Height 16.07mm
	Minimum Operating Temperature -55 °C

onsemi QFET N-Channel MOSFET, 9 A, 500 V, 3-Pin TO-220F FQPF9N50CF

QFET® N-Channel MOSFET, 6A to 10.9A, Fairchild Semiconductor

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