onsemi PowerTrench N-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220F FDPF085N10A
- RS Stock No.:
- 806-3573
- Mfr. Part No.:
- FDPF085N10A
- Brand:
- onsemi
Subtotal (1 pack of 2 units)*
£1.57
(exc. VAT)
£1.884
(inc. VAT)
FREE delivery for orders over £50.00
- Final 986 unit(s), ready to ship
Units | Per unit | Per Pack* |
---|---|---|
2 + | £0.785 | £1.57 |
*price indicative
- RS Stock No.:
- 806-3573
- Mfr. Part No.:
- FDPF085N10A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 40 A | |
Maximum Drain Source Voltage | 100 V | |
Series | PowerTrench | |
Package Type | TO-220F | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 8.5 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 33.3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Maximum Operating Temperature | +175 °C | |
Typical Gate Charge @ Vgs | 9.7 nC @ 10 V | |
Transistor Material | Si | |
Length | 10.36mm | |
Width | 4.9mm | |
Height | 16.07mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 100 V | ||
Series PowerTrench | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 33.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 9.7 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.36mm | ||
Width 4.9mm | ||
Height 16.07mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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