onsemi PowerTrench N-Channel MOSFET, 67 A, 100 V, 3-Pin TO-220F FDPF045N10A
- RS Stock No.:
- 145-4441
- Mfr. Part No.:
- FDPF045N10A
- Brand:
- onsemi
Subtotal (1 tube of 50 units)*
£62.15
(exc. VAT)
£74.60
(inc. VAT)
FREE delivery for orders over £50.00
- Final 950 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 + | £1.243 | £62.15 |
*price indicative
- RS Stock No.:
- 145-4441
- Mfr. Part No.:
- FDPF045N10A
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 67 A | |
Maximum Drain Source Voltage | 100 V | |
Package Type | TO-220F | |
Series | PowerTrench | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 4.5 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 43 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 10.36mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 57 nC @ 10 V | |
Width | 4.9mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +175 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 16.07mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 67 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220F | ||
Series PowerTrench | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 43 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 57 nC @ 10 V | ||
Width 4.9mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16.07mm | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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