Infineon HEXFET N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK-7 AUIRLS3036-7P

Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
784-9243
Mfr. Part No.:
AUIRLS3036-7P
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

240 A, 300 A

Maximum Drain Source Voltage

60 V

Series

HEXFET

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

380 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

10.67mm

Width

9.65mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

4.83mm

COO (Country of Origin):
MX

Automotive N-Channel Power MOSFET, Infineon


Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Related links