Name: Infineon HEXFET N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK-7 AUIRLS3036-7P
Brand: Infineon
SKU: 784-9243
Price: 6.48 GBP
Availability: LimitedAvailability

Automotive N-Channel Power MOSFET, Infineon

Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Units	Per unit
1 - 4	£5.40
5 - 9	£5.12
10 - 24	£4.61
25 - 49	£4.16
50 +	£3.95

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	240 A, 300 A
	Maximum Drain Source Voltage	60 V
	Series	HEXFET
	Package Type	D2PAK-7
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	1.9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	380 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	10.67mm
	Typical Gate Charge @ Vgs	110 nC @ 10 V
	Width	9.65mm
	Height	4.83mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 240 A, 300 A
	Maximum Drain Source Voltage 60 V
	Series HEXFET
	Package Type D2PAK-7
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 1.9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 380 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 10.67mm
	Typical Gate Charge @ Vgs 110 nC @ 10 V
	Width 9.65mm
	Height 4.83mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET N-Channel MOSFET, 240 A, 300 A, 60 V, 7-Pin D2PAK-7 AUIRLS3036-7P

FREE delivery for orders over £50.00

Automotive N-Channel Power MOSFET, Infineon

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