Infineon HEXFET Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228

This high power MOSFET is designed for various applications requiring robust performance and efficiency. It features a compact D2PAK-7 surface mount package, ensuring convenient installation in space-constrained environments. With a continuous drain current capability of 557A and a maximum drain-source voltage of 40V, its dimensions measure 10.54mm in length, 9.65mm in width, and 4.83mm in height.

• Optimised for logic level drive for enhanced compatibility
• Low RDS(on) of 0.50mΩ for reduced power loss
• High current capacity up to 557A for demanding applications
• Versatile applications in motor drives and power supplies

• Suitable for brushed and BLDC motor drive circuits
• Ideal for battery-powered electronic systems
• Utilised in half-bridge and full-bridge circuit topologies
• Effective as a synchronous rectifier in power supply
• Used in DC-DC and AC-DC converters

The device's low on-resistance significantly improves efficiency, allowing for higher current flow without substantial heat generation. This supports reliability and performance in demanding situations where current capacity is critical.

It operates effectively across a wide temperature range from -55°C to +175°C, ensuring stability and functionality even under extreme operating conditions.

Enhanced gate and avalanche ruggedness protect it from voltage spikes, while its low dynamic dV/dt capabilities contribute to consistent performance in rapidly changing conditions.