Infineon HEXFET N-Channel MOSFET, 522 A, 40 V, 7-Pin D2PAK AUIRFS8409-7TRL

Subtotal (1 reel of 800 units)*

£1,960.00

(exc. VAT)

£2,352.00

(inc. VAT)

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Units
Per unit
Per Reel*
800 +£2.45£1,960.00

*price indicative

RS Stock No.:
215-2453
Mfr. Part No.:
AUIRFS8409-7TRL
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

522 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK (TO-263)

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.00075 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

Si

The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a D2-Pak 7pin package. specifically designed for automotive application, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance par silicon area. Additional features of these designs are 175°C junction operating temperature, fast switching speed and improve repetitive avalanche rating. This feature combined to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications.

Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free

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