Infineon HEXFET Silicon N-Channel MOSFET, 320 A, 40 V, 7-Pin D2PAK-7 AUIRF2804STRL7P

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Subtotal (1 pack of 2 units)*

£8.74

(exc. VAT)

£10.48

(inc. VAT)

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  • 800 unit(s) ready to ship
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Per Pack*
2 - 18£4.37£8.74
20 - 48£3.935£7.87
50 - 98£3.67£7.34
100 - 198£3.41£6.82
200 +£3.19£6.38

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Packaging Options:
RS Stock No.:
222-4606
Mfr. Part No.:
AUIRF2804STRL7P
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

320 A

Maximum Drain Source Voltage

40 V

Series

HEXFET

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0016 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

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