Infineon HEXFET Type N-Channel MOSFET, 320 A, 40 V, 3-Pin TO-263 IRFS7434TRLPBF
- RS Stock No.:
- 214-4462
- Mfr. Part No.:
- IRFS7434TRLPBF
- Brand:
- Infineon
Subtotal (1 pack of 10 units)*
£10.72
(exc. VAT)
£12.86
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 690 unit(s) shipping from 01 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 + | £1.072 | £10.72 |
*price indicative
- RS Stock No.:
- 214-4462
- Mfr. Part No.:
- IRFS7434TRLPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 320A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.6mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 324nC | |
| Maximum Power Dissipation Pd | 294W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 320A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.6mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 324nC | ||
Maximum Power Dissipation Pd 294W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon HEXFET Power MOSFET is optimized for broadest availability from distribution partners. It has softer body-diode compared to previous silicon generation
It is capable of being wave soldered
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