Infineon HEXFET Silicon N-Channel MOSFET, 320 A, 40 V, 7-Pin D2PAK-7 AUIRF2804STRL7P

Subtotal (1 reel of 800 units)*

£1,171.20

(exc. VAT)

£1,405.60

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 800 unit(s) ready to ship
  • Plus 999,998,400 unit(s) shipping from 01 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
800 +£1.464£1,171.20

*price indicative

RS Stock No.:
222-4605
Mfr. Part No.:
AUIRF2804STRL7P
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

320 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK-7

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0016 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Silicon

Number of Elements per Chip

1

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology
Ultra-low on-resistance Fast switching
Lead-Free, RoHS Compliant

Related links