Infineon HEXFET Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228

RS Stock No.:: 222-4755
Mfr. Part No.:: IRL40SC228
Brand:: Infineon

Infineon HEXFET Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228

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Units	Per unit	Per Pack*
5 - 20	£3.40	£17.00
25 - 45	£2.856	£14.28
50 - 120	£2.652	£13.26
125 - 245	£2.482	£12.41
250 +	£2.312	£11.56

*price indicative

RS Stock No.:: 222-4755
Mfr. Part No.:: IRL40SC228
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	557 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK-7
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	0.00065 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.4V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	416 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	± 20 V
	Maximum Operating Temperature	+175 °C
	Transistor Material	Silicon
	Number of Elements per Chip	1
	Length	10.54mm
	Typical Gate Charge @ Vgs	205 nC
	Width	9.65mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	4.83mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 557 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK-7
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 0.00065 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.4V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 416 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ± 20 V
	Maximum Operating Temperature +175 °C
	Transistor Material Silicon
	Number of Elements per Chip 1
	Length 10.54mm
	Typical Gate Charge @ Vgs 205 nC
	Width 9.65mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 4.83mm

Datasheet - IRL40SC228

Infineon HEXFET Series MOSFET, 557A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRL40SC228

This high power MOSFET is designed for various applications requiring robust performance and efficiency. It features a compact D2PAK-7 surface mount package, ensuring convenient installation in space-constrained environments. With a continuous drain current capability of 557A and a maximum drain-source voltage of 40V, its dimensions measure 10.54mm in length, 9.65mm in width, and 4.83mm in height.

Features & Benefits

• Optimised for logic level drive for enhanced compatibility
• Low RDS(on) of 0.50mΩ for reduced power loss
• High current capacity up to 557A for demanding applications
• Versatile applications in motor drives and power supplies

Applications

• Suitable for brushed and BLDC motor drive circuits
• Ideal for battery-powered electronic systems
• Utilised in half-bridge and full-bridge circuit topologies
• Effective as a synchronous rectifier in power supply
• Used in DC-DC and AC-DC converters

What are the key benefits of using this device in high-current applications?

The device's low on-resistance significantly improves efficiency, allowing for higher current flow without substantial heat generation. This supports reliability and performance in demanding situations where current capacity is critical.

How does this MOSFET perform under high temperature conditions?

It operates effectively across a wide temperature range from -55°C to +175°C, ensuring stability and functionality even under extreme operating conditions.

What features enhance the robustness of this MOSFET during operation?

Enhanced gate and avalanche ruggedness protect it from voltage spikes, while its low dynamic dV/dt capabilities contribute to consistent performance in rapidly changing conditions.