Infineon HEXFET Silicon N-Channel MOSFET, 557 A, 40 V, 7-Pin D2PAK-7 IRL40SC228
- RS Stock No.:
- 222-4755
- Mfr. Part No.:
- IRL40SC228
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£17.00
(exc. VAT)
£20.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 465 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £3.40 | £17.00 |
| 25 - 45 | £2.856 | £14.28 |
| 50 - 120 | £2.652 | £13.26 |
| 125 - 245 | £2.482 | £12.41 |
| 250 + | £2.312 | £11.56 |
*price indicative
- RS Stock No.:
- 222-4755
- Mfr. Part No.:
- IRL40SC228
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 557 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK-7 | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 0.00065 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 416 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ± 20 V | |
| Transistor Material | Silicon | |
| Width | 9.65mm | |
| Typical Gate Charge @ Vgs | 205 nC | |
| Length | 10.54mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 4.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 557 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK-7 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 0.00065 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 416 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ± 20 V | ||
Transistor Material Silicon | ||
Width 9.65mm | ||
Typical Gate Charge @ Vgs 205 nC | ||
Length 10.54mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.2V | ||
Height 4.83mm | ||
Minimum Operating Temperature -55 °C | ||
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