N-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 Infineon BSP320SH6327XTSA1
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Brand:
- Infineon
10 In stock - FREE next working day delivery available
Added
Price Each (On a Tape of 10)
£0.486
(exc. VAT)
£0.583
(inc. VAT)
| Units | Per unit | Per Tape* |
| 10 - 90 | £0.486 | £4.86 |
| 100 - 240 | £0.462 | £4.62 |
| 250 - 490 | £0.442 | £4.42 |
| 500 - 990 | £0.423 | £4.23 |
| 1000 + | £0.394 | £3.94 |
| *price indicative | ||
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.9 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-223 |
| Series | SIPMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 120 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Length | 6.5mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 9.7 nC @ 10 V |
| Transistor Material | Si |
| Width | 3.5mm |
| Minimum Operating Temperature | -55 °C |
| Height | 1.6mm |
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Brand:
- Infineon