Infineon SIPMOS Type N-Channel MOSFET, 2.9 A, 60 V Enhancement, 3-Pin SOT-223 BSP320SH6327XTSA1
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tape of 10 units)*
£5.49
(exc. VAT)
£6.59
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Plus 50 unit(s) shipping from 29 December 2025
- Final 300 unit(s) shipping from 05 January 2026
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | £0.549 | £5.49 |
| 100 - 240 | £0.522 | £5.22 |
| 250 - 490 | £0.499 | £4.99 |
| 500 - 990 | £0.478 | £4.78 |
| 1000 + | £0.445 | £4.45 |
*price indicative
- RS Stock No.:
- 753-2810
- Mfr. Part No.:
- BSP320SH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Forward Voltage Vf | 0.95V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.5 mm | |
| Height | 1.6mm | |
| Length | 6.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Forward Voltage Vf 0.95V | ||
Maximum Power Dissipation Pd 1.8W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.5 mm | ||
Height 1.6mm | ||
Length 6.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon SIPMOS® N-Channel MOSFET 60 V, 3-Pin SOT-223 BSP320SH6327XTSA1
- Infineon SIPMOS® P-Channel MOSFET 60 V, 3-Pin SOT-223 BSP613PH6327XTSA1
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-23 DMN6140L-7
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NTF5P03T3G
- onsemi P-Channel MOSFET 60 V, 6-Pin TSOP-6 NTGS5120PT1G
- Diodes Inc DMN2053UW N-Channel MOSFET 20 V, 3-Pin SOT-323 DMN2053UWQ-7
- Diodes Inc P-Channel MOSFET 30 V, 3-Pin SOT-23 DMP3099L-7
- Diodes Inc N-Channel MOSFET 60 V, 3-Pin SOT-223 ZVN2106GTA