Infineon SIPMOS® N-Channel MOSFET, 2.9 A, 60 V, 3-Pin SOT-223 BSP320SH6327XTSA1

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Subtotal (1 tape of 10 units)*

£5.49

(exc. VAT)

£6.59

(inc. VAT)

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Last RS stock
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  • Final 350 unit(s) shipping from 09 October 2025
Units
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Per Tape*
10 - 90£0.549£5.49
100 - 240£0.522£5.22
250 - 490£0.499£4.99
500 - 990£0.478£4.78
1000 +£0.445£4.45

*price indicative

Packaging Options:
RS Stock No.:
753-2810
Mfr. Part No.:
BSP320SH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.5mm

Length

6.5mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

9.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.6mm

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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