Infineon HEXFET N-Channel MOSFET, 2.7 A, 60 V, 3-Pin SOT-23 IRLML0060TRPBF
- RS Stock No.:
- 725-9341
- Mfr. Part No.:
- IRLML0060TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
£3.62
(exc. VAT)
£4.34
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 6,960 unit(s) ready to ship
- Plus 74,680 unit(s) shipping from 12 September 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 180 | £0.181 | £3.62 |
| 200 - 480 | £0.136 | £2.72 |
| 500 - 980 | £0.127 | £2.54 |
| 1000 - 1980 | £0.118 | £2.36 |
| 2000 + | £0.109 | £2.18 |
*price indicative
- RS Stock No.:
- 725-9341
- Mfr. Part No.:
- IRLML0060TRPBF
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.7 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 92 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 2.5 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.7 A | ||
Maximum Drain Source Voltage 60 V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 92 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.25 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 1.4mm | ||
Transistor Material Si | ||
Length 3.04mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 2.5 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
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