Infineon HEXFET N-Channel MOSFET, 4.1 A, 20 V, 3-Pin SOT-23 IRLML6246TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Series

HEXFET

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

1.4mm

Length

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

1.02mm