Infineon HEXFET N-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 IRLML0040TRPBF

RS Stock No.:: 913-4051
Mfr. Part No.:: IRLML0040TRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 IRLML0040TRPBF

Subtotal (1 reel of 3000 units)*

£297.00

(exc. VAT)

£357.00

(inc. VAT)

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6,000 unit(s) shipping from 06 November 2025

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Units	Per unit	Per Reel*
3000 +	£0.099	£297.00

*price indicative

RS Stock No.:: 913-4051
Mfr. Part No.:: IRLML0040TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	3.6 A
	Maximum Drain Source Voltage	40 V
	Series	HEXFET
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	56 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	1.3 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	2.6 nC @ 4.5 V
	Length	3.04mm
	Number of Elements per Chip	1
	Width	1.4mm
	Transistor Material	Si
	Height	1.02mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 3.6 A
	Maximum Drain Source Voltage 40 V
	Series HEXFET
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 56 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 1.3 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 2.6 nC @ 4.5 V
	Length 3.04mm
	Number of Elements per Chip 1
	Width 1.4mm
	Transistor Material Si
	Height 1.02mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

COO (Country of Origin):: PH

N-Channel Power MOSFET 40V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 3.6A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0040TRPBF

This power MOSFET is engineered for efficiency and reliability in a range of electronic circuits. With low on-resistance and high performance, it is suitable for applications that demand energy efficiency and robust operation. This component is notable for its ability to manage significant electrical loads, which makes it relevant for engineers and professionals in the automation and electronics sectors.

Features & Benefits

• Low RDS(on) of 56mΩ reduces switching losses
• Supports enhancement mode for efficient power control
• Maximum continuous drain current of 3.6A for steadfast operation
• Operates at a maximum drain-source voltage of 40V
• Designed for surface mount technology, perfect for compact designs
• Compatible with HEXFET technology for high performance

Applications

• Ideal for load and system switch
• Utilised in DC motor drive systems
• Effective for high-speed switching and amplifiers
• Suitable for surface mount in compact circuitry
• Employed in various power electronic circuits

What is the thermal resistance of this device?

The thermal resistance is typically 100°C/W, ensuring efficient heat dissipation during operation.

How does the gate threshold voltage impact device performance?

The gate threshold voltage ranges from 1.0 V to 2.5 V, providing flexibility in gate control across various applications.

Can it handle pulsed drain currents?

Yes, this component can endure pulsed drain currents that exceed its continuous rating, ensuring reliability in transient conditions.

What factors influence the maximum power dissipation of this component?

Power dissipation is mainly affected by ambient temperature and thermal resistance, which impact the junction temperature under load.

How does the MOSFET perform at high temperatures?

This device functions effectively within a temperature range of -55°C to +150°C, ensuring stability in challenging environments.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.