Infineon HEXFET N-Channel MOSFET, 5.3 A, 30 V, 3-Pin SOT-23 IRLML0030TRPBF
- RS Stock No.:
- 913-4042
- Mfr. Part No.:
- IRLML0030TRPBF
- Brand:
- Infineon
Subtotal (1 reel of 3000 units)*
£222.00
(exc. VAT)
£267.00
(inc. VAT)
FREE delivery for orders over £50.00
- 18,000 unit(s) ready to ship
Units | Per unit | Per Reel* |
---|---|---|
3000 - 3000 | £0.074 | £222.00 |
6000 - 6000 | £0.07 | £210.00 |
9000 + | £0.066 | £198.00 |
*price indicative
- RS Stock No.:
- 913-4042
- Mfr. Part No.:
- IRLML0030TRPBF
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 5.3 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Series | HEXFET | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 27 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.3V | |
Minimum Gate Threshold Voltage | 1.3V | |
Maximum Power Dissipation | 1.3 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 3.04mm | |
Typical Gate Charge @ Vgs | 2.6 nC @ 4.5 V | |
Maximum Operating Temperature | +150 °C | |
Width | 1.4mm | |
Transistor Material | Si | |
Height | 1.02mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 27 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 2.6 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.4mm | ||
Transistor Material Si | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
- COO (Country of Origin):
- PH
N-Channel Power MOSFET 30V, Infineon
Infineon HEXFET Series MOSFET, 5.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML0030TRPBF
Features & Benefits
• 30V maximum drain-source voltage supports rigorous applications
• Low Rds(on) of 27 mΩ minimises energy losses during operation
• Compatible with surface mount technology for straightforward integration
• High-temperature rating of +150 °C maintains performance in challenging environments
• RoHS compliant, promoting eco-friendly design and manufacturing
Applications
• Suitable for automotive electronics for switch control
• Employed in power supply circuits for efficient current handling
• Ideal for consumer electronics requiring compact power solutions
• Applied in automation systems for consistent control operations
How does the gate threshold voltage affect switching behaviour?
What considerations should be taken during installation regarding thermal management?
Can it be integrated with existing circuits designed for other technologies?
What are the implications of the maximum gate-source voltage rating?
How does this component compare to other switching devices?
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