Infineon HEXFET N-Channel MOSFET, 2.7 A, 30 V, 3-Pin SOT-23 IRLML2030TRPBF

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Subtotal (1 reel of 3000 units)*

£225.00

(exc. VAT)

£270.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 - 3000£0.075£225.00
6000 - 12000£0.071£213.00
15000 +£0.067£201.00

*price indicative

RS Stock No.:
165-7763
Mfr. Part No.:
IRLML2030TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

3.04mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

1 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.02mm

COO (Country of Origin):
PH

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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